AO4419 30v p-channel mosfet general description p roduct summary v ds i d (at v gs =-10v) -9 .7a r ds(on) (at v gs =-10v) < 20m w r ds(on) (at v gs = -4.5v) < 35m w 100% uis tested 100% r g tested symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl c t hermal characteristics w 3.1 maximum junction-to-ambient a 2 t a =70c j unction and storage temperature range -55 to 150 c/w r q ja 31 5 9 40 units parameter typ max v 20 gate-source voltage drain-source voltage -30 the AO4419 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch a nd battery protection applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -30v a i d -9.7 -7 .8 -70 mj avalanche current c 36 a -2 7 t a =25c t a =70c po wer dissipation b p d avalanche energy l=0.1mh c pulsed drain current c continuous drain c urrent t a =25c m aximum junction-to-lead c/w c/w maximum junction-to-ambient a d 16 75 24 g d s soic-8 top view bottom view d d d d s s s g rev 6: may 2011 www.aosmd.com page 1 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4419 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.5 -2.0 -2.5 v i d(on) -70 a 16.5 20 t j =125c 24 29 26 35 m w g fs 27 s v sd -0.75 -1 v i s -4 a i sm -70 a c iss 1040 pf c oss 180 pf c rss 125 pf r g 2 4 6 w q g (10v) 19 nc q g (4.5v) 9.6 nc q gs 3.6 nc q gd 4.6 nc t d(on) 10 ns t r 5.5 ns t d(off) 26 ns t f 9 ns t rr 11.5 ns q rr 25 nc this product has been designed and qualified for the consumer market. applications or uses as critical c omponents in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i s =-1a,v gs =0v v ds =-5v, i d =-9.7a i f =-9.7a, di/dt=500a/ m s switching parameters maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time reverse transfer capacitance v gs =0v, v ds =-15v, f=1mhz pulsed body-diode current c body diode reverse recovery charge i f =-9.7a, di/dt=500a/ m s turn-off delaytime v gs =-10v, v ds =-15v, i d =-9.7a gate source charge gate drain charge total gate charge gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =-250 m a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current m w body diode reverse recovery time drain-source breakdown voltage i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-9.7a on state drain current v gs =-4.5v, i d =-7a forward transconductance diode forward voltage v gs =-10v, v ds =-15v, r l =1.5 w , r gen =3 w electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse ratin g. rev 6: may 2011 w ww.aosmd.com page 2 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4419 typical electrical and thermal characteristics 17 5 2 10 0 18 40 0 10 20 30 40 0 1 2 3 4 5 -v gs (volts) f igure 2: transfer characteristics (note e) -i d (a) 10 15 20 25 30 35 0 5 10 15 20 -i d (a) f igure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) f igure 6: body-diode characteristics (note e) -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =-4.5v i d =-7a v gs =-10v i d =-9.7a 10 20 30 40 50 60 2 4 6 8 10 -v gs (volts) f igure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w w w w ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-9.7a 25c 125c 0 10 20 30 40 50 60 0 1 2 3 4 5 -v ds (volts) f ig 1: on-region characteristics (note e) -i d (a) v gs =-3.0v -3.5v -7v -10v -4.5v -5v rev 6: may 2011 www.aosmd.com page 3 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4419 typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 q g (nc) f igure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 -v ds (volts) f igure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =-15v i d =-9.7a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) f igure 11: single pulse power rating junction-to-ambient (note f) power (w) t a =25c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -v ds (volts) -i d (amps) figure 10: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s 10ms 1 10 100 1 10 100 1000 time in avalanche, t a ( m m m m s) figure 9: single pulse avalanche capability (note c) -i ar (a) peak avalanche current t a =150c t a =25c t a =100c t a =125c rev 6: may 2011 www.aosmd.com page 4 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4419 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 12: normalized maximum transient thermal impedance (note f) z q q q q j a normalized transient t hermal resistance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =75c/w rev 6: may 2011 www.aosmd.com page 5 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4419 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar a r bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d (off) f off d (on) rev 6: may 2011 www.aosmd.com page 6 of 6 nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
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